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| PRELIMINARY SOLID STATE DEVICES, INC. SPMQ496-01 400 AMP/600 VOLTS IGBT POWER MODULE FOR SPACE APPLICATIONS ASPM 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: High Current Switching for Motor Drives and Inverters for Space Applications. Push-Pull Configuration with Freewheeling Diodes. Low Saturation Voltage at High Currents. Low Mechanical Stress Design. Hermetic Sealed Construction for Aerospace Applications. Excellent Thermal Management. Full Power Screened Hermetic Discretes. TX, TXV, and S-Level Screening Available. Consult Factory for: Faster Switching Speeds; Other Bridge Configurations and Terminal Styles. MAXIMUM RATINGS CHARACTERISTIC Collector to Emiter Voltage Gate to Collector Voltage Continuous Collector Current TB = 25 C TB = 90oC o SYMBOL VCES VGES I C1 I C2 I CM I LM EARV TOP & TSTG 1 JB PD1 PD2 VALUE 600 "20 400 200 600 200 5.6 -55 TO +150 0.14 1250 10 UNIT Volts Volts Amps Amps Amps mJ o o Pulse Collector Current 1/ Clamped Inductive Load Current (TB = 125 EC, VCC = 480V, VGE = 15V, L = 30uH, RG = 10S Reverse Voltage Avalange Energy 1/ (IC = 200A) Operating and Storage Temperature Thermal Resistance, Junction to Base Total Module Dissipation @TB = 25oC Dissipation Derating from TB = 25oC to TB = 150oC 1/ Pulse Duration Limited by TJMAX; Repetative Rating C C/W W W/oC ELECTRICAL SCHEMATIC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0010A SPMQ496-01 PRELIMINARY 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 SOLID STATE DEVICES, INC. ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING SYMBOL MIN MAX UNIT Collector - Emitter Breakdown Voltage (ICES = 250:A, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) Collector-Emitter Saturation Voltage (IC = 200A, VGE = 15V) Gate-Emitter Leakage Current (VGE = "20V, VCE = 0V) Collector Leakage Current (VCE = 480V, VGE = 0V) Anti-Parallel Diode Forward Voltage (IF = 200A, TB = 25oC) (TB = 25oC) (TB = 90oC) BVCES VGE(th) VCE(sat)2 VCE(sat)1 IGES (TB = 25oC) (TB = 125oC) ICES1 ICES1 VF RINSUL1 600 2.0 1 6 3.1 2.5 2.0 225 20 1.6 - Volts Volts Volts :Amps :Amps mAmps Volts GS Insulation Resistance (All terminals to Base @1500V) PACKAGE OUTLINE: ASPM Tolerances (Unless specified): .XX ".03 .XXX ".010 |
Price & Availability of SPMQ496-01
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